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FLM5972-12F
FEATURES
* * * * * * * High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: add = 37% (Typ.) Low IM3 = -45dBc@Po = 30.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM5972-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IK
Edition 1.1 August 2004
Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch
Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3250mA VDS = 5V, IDS = 250mA IGS = -250A VDS =10V, IDS = 0.65IDSS (Typ.), f = 5.9 ~ 7.2 GHz, ZS=ZL=50 ohm f = 7.2 GHz, f = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L. Channel to Case 10V x Idsr x Rth
Min. -0.5 -5.0 40.5 8.5 -42 -
Limit Typ. Max. 5000 7500 5000 -1.5 41.5 9.5 37 -45 2.3 -3.0 0.8 2.6 80
Unit mA mS V V dBm dB mA % dB dBc C/W C
3250 3800
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
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FLM5972-12F
C-Band Internally Matched FET
POWER DERATING CURVE
60 Total Power Dissipation (W)
Output Power (S.C.L.) (dBm)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V f1 = 7.2GHz f2 = 7.21 GHz 2-tone test
Pout
50 40 30 20 10 0 50 100 150 200
38 36 34 32 30
-10 -20 -30
IM3
28 26
-40 -50
Case Temperature (C)
17
19
21
23
25
27
29
Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
43
OUTPUT POWER vs. INPUT POWER
VDS=10V f = 6.55 GHz
Pout
VDS=10V P1dB
Pin=34dBm
42
Output Power (dBm)
42 41 40 39 38 37 36 5.8 6.0 6.2 6.4 6.6 6.8
Output Power (dBm)
40 38 36 34 32 45 30
add
30dBm
28dBm
26dBm
15
7.0
7.2 21 23 25 27 29 31 33
Frequency (GHz)
Input Power (dBm)
2
add (%)
IM3 (dBc)
FLM5972-12F
C-Band Internally Matched FET
S11 S22 +j100
7.2 7.0 7.4 5.7GHz 5.7GHz 7.4 5.8 6.0 6.2 6.4 6.6 6.8 7.2 7.0 6.8 6.0 6.2 6.4 250 6.6 6.4 7.0 6.8 6.6 6.8 7.2 7.4
+j50 +j25
+90
S21 S12
+j10
+j250
0
25
7.2
180
6.6
6.4 1 6.2 6.0 5.8 0.1 5.7GHz
7.4 2
3
4
0
SCALE FOR |S21|
7.0
6.2 6.0
SCALE FOR |S12|
-j10
-j250
5.7GHz 5.8
-j25 -j50
-j100
0.2
-90
FREQUENCY (MHZ)
5700 5800 5900 6000 6100 6200 6300 6400 6500 6600 6700 6800 6900 7000 7100 7200 7300 7400
S11 MAG
.486 .511 .527 .536 .540 .534 .523 .505 .479 .447 .404 .354 .296 .248 .252 .331 .458 .586
ANG
91.9 77.6 65.0 54.0 43.5 33.2 23.6 13.3 2.4 -9.5 -23.3 -41.0 -65.0 -100.9 -135.8 179.5 146.9 122.5
S-PARAMETERS VDS = 10V, IDS = 3250mA S21 S12 MAG ANG MAG ANG
4.016 3.787 3.592 3.443 3.335 3.268 3.213 3.197 3.206 3.254 3.323 3.383 3.449 3.495 3.488 3.375 3.128 2.759 -62.2 -76.7 -90.5 -103.6 -116.2 -128.9 -141.4 -154.0 -167.0 179.6 165.7 150.9 134.7 116.9 104.3 83.7 62.3 41.3 .056 .057 .057 .059 .061 .061 .063 .066 .067 .072 .073 .078 .078 .080 .081 .079 .074 .067 -100.3 -116.1 -130.1 -141.2 -153.9 -164.8 -176.4 170.4 159.1 147.0 133.3 120.2 104.0 88.6 76.5 55.3 35.6 16.5
S22 MAG
.350 .367 .385 .394 .410 .426 .436 .439 .439 .434 .420 .392 .346 .281 .210 .108 .093 .212
ANG
90.5 79.0 69.2 59.5 51.2 44.8 38.3 31.6 24.2 17.4 9.6 1.5 -6.6 -20.8 -31.6 -67.2 -173.8 148.7
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FLM5972-12F
C-Band Internally Matched FET
Case Style "IK" Metal-Ceramic Hermetic Package
2.0 Min. (0.079)
1
0.1 (0.004)
2
0.6 (0.024) 14.9 (0.587)
2.0 Min. (0.079)
4-R 1.30.15 (0.051)
3 2.40.15 (0.094) 5.5 Max. (0.217)
1.4 (0.055)
17.40.3 (0.685)
8.00.2 (0.315)
1. Gate 2. Source (Flange) 3. Drain
Unit: mm(inches)
20.40.3 (0.803) 240.5 (0.945)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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